Optical anisotropy in vertically coupled quantum dots
Identifieur interne : 000C15 ( Russie/Analysis ); précédent : 000C14; suivant : 000C16Optical anisotropy in vertically coupled quantum dots
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Abstract
We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single-layer and 3-layer structures show only a weak TE polarization, it is enhanced for 10-layer stacks. The 20-layer stacks additionally show a low-energy side-band of high TE polarization, which is attributed to laterally coupled QDs forming after the growth of many layers by lateral coalescence of QDs in the upper layers. While in the single, 3- and 10-layer stacks, both TE polarized PL components are stronger than the TM component, the [110] TE component is weaker than the TM component in the 20-layer stack. This polarization reversal is attributed to an increasing vertical coupling with increasing layer number due to increasing dot size.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical anisotropy in vertically coupled quantum dots</title><author><name sortKey="Yu, P" uniqKey="Yu P">P. Yu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Center COM, The Technical University of Denmark, DK-2800 Lyngby, Denmark</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Danemark</country><wicri:regionArea>Research Center COM, The Technical University of Denmark, DK-2800 Lyngby</wicri:regionArea><wicri:noRegion>DK-2800 Lyngby</wicri:noRegion></affiliation></author><author><name sortKey="Langbein, W" uniqKey="Langbein W">W. Langbein</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Center COM, The Technical University of Denmark, DK-2800 Lyngby, Denmark</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Danemark</country><wicri:regionArea>Research Center COM, The Technical University of Denmark, DK-2800 Lyngby</wicri:regionArea><wicri:noRegion>DK-2800 Lyngby</wicri:noRegion></affiliation></author><author><name sortKey="Leosson, K" uniqKey="Leosson K">K. Leosson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Center COM, The Technical University of Denmark, DK-2800 Lyngby, Denmark</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Danemark</country><wicri:regionArea>Research Center COM, The Technical University of Denmark, DK-2800 Lyngby</wicri:regionArea><wicri:noRegion>DK-2800 Lyngby</wicri:noRegion></affiliation></author><author><name sortKey="Hvam, J M" uniqKey="Hvam J">J. M. Hvam</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Center COM, The Technical University of Denmark, DK-2800 Lyngby, Denmark</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Danemark</country><wicri:regionArea>Research Center COM, The Technical University of Denmark, DK-2800 Lyngby</wicri:regionArea><wicri:noRegion>DK-2800 Lyngby</wicri:noRegion></affiliation></author><author><name sortKey="Ledentsov, N N" uniqKey="Ledentsov N">N. N. Ledentsov</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut fur Festkorperphysik, Technische Universitat Berlin, D-10623 Berlin, Germany</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut fur Festkorperphysik, Technische Universitat Berlin, D-10623 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Bimberg, D" uniqKey="Bimberg D">D. Bimberg</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut fur Festkorperphysik, Technische Universitat Berlin, D-10623 Berlin, Germany</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut fur Festkorperphysik, Technische Universitat Berlin, D-10623 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Ustinov, V M" uniqKey="Ustinov V">V. M. Ustinov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A. F. Ioffe Physical-Technical Institute, 194021 Saint Petersburg, Russia</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physical-Technical Institute, 194021 Saint Petersburg</wicri:regionArea><wicri:noRegion>194021 Saint Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Egorov, A Yu" uniqKey="Egorov A">A. Yu. Egorov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A. F. Ioffe Physical-Technical Institute, 194021 Saint Petersburg, Russia</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physical-Technical Institute, 194021 Saint Petersburg</wicri:regionArea><wicri:noRegion>194021 Saint Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Zhukov, A E" uniqKey="Zhukov A">A. E. Zhukov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A. F. Ioffe Physical-Technical Institute, 194021 Saint Petersburg, Russia</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physical-Technical Institute, 194021 Saint Petersburg</wicri:regionArea><wicri:noRegion>194021 Saint Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Tsatsulnikov, A F" uniqKey="Tsatsulnikov A">A. F. Tsatsulnikov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A. F. Ioffe Physical-Technical Institute, 194021 Saint Petersburg, Russia</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physical-Technical Institute, 194021 Saint Petersburg</wicri:regionArea><wicri:noRegion>194021 Saint Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Musikhin, Yu G" uniqKey="Musikhin Y">Yu. G. Musikhin</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A. F. Ioffe Physical-Technical Institute, 194021 Saint Petersburg, Russia</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physical-Technical Institute, 194021 Saint Petersburg</wicri:regionArea><wicri:noRegion>194021 Saint Petersburg</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0020814</idno><date when="1999-12-15">1999-12-15</date><idno type="stanalyst">PASCAL 00-0020814 AIP</idno><idno type="RBID">Pascal:00-0020814</idno><idno type="wicri:Area/Main/Corpus">013E61</idno><idno type="wicri:Area/Main/Repository">013864</idno><idno type="wicri:Area/Russie/Extraction">000C15</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title><title level="j" type="main">Physical review. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Molecular beam epitaxy</term><term>Photoluminescence</term><term>Semiconductor growth</term><term>Semiconductor quantum dots</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7855C</term><term>7320D</term><term>4255P</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Photoluminescence</term><term>Epitaxie jet moléculaire</term><term>Croissance semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In<sub>0.5</sub>Ga<sub>0.5</sub>As/GaAs quantum dots (QDs) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single-layer and 3-layer structures show only a weak TE polarization, it is enhanced for 10-layer stacks. The 20-layer stacks additionally show a low-energy side-band of high TE polarization, which is attributed to laterally coupled QDs forming after the growth of many layers by lateral coalescence of QDs in the upper layers. While in the single, 3- and 10-layer stacks, both TE polarized PL components are stronger than the TM component, the [110] TE component is weaker than the TM component in the 20-layer stack. This polarization reversal is attributed to an increasing vertical coupling with increasing layer number due to increasing dot size.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0></fA03><fA05><s2>60</s2></fA05><fA06><s2>24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical anisotropy in vertically coupled quantum dots</s1></fA08><fA11 i1="01" i2="1"><s1>YU (P.)</s1></fA11><fA11 i1="02" i2="1"><s1>LANGBEIN (W.)</s1></fA11><fA11 i1="03" i2="1"><s1>LEOSSON (K.)</s1></fA11><fA11 i1="04" i2="1"><s1>HVAM (J. M.)</s1></fA11><fA11 i1="05" i2="1"><s1>LEDENTSOV (N. N.)</s1></fA11><fA11 i1="06" i2="1"><s1>BIMBERG (D.)</s1></fA11><fA11 i1="07" i2="1"><s1>USTINOV (V. M.)</s1></fA11><fA11 i1="08" i2="1"><s1>EGOROV (A. Yu.)</s1></fA11><fA11 i1="09" i2="1"><s1>ZHUKOV (A. E.)</s1></fA11><fA11 i1="10" i2="1"><s1>TSATSULNIKOV (A. F.)</s1></fA11><fA11 i1="11" i2="1"><s1>MUSIKHIN (Yu. G.)</s1></fA11><fA14 i1="01"><s1>Research Center COM, The Technical University of Denmark, DK-2800 Lyngby, Denmark</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Institut fur Festkorperphysik, Technische Universitat Berlin, D-10623 Berlin, Germany</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>A. F. Ioffe Physical-Technical Institute, 194021 Saint Petersburg, Russia</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA20><s1>16680-16685</s1></fA20><fA21><s1>1999-12-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0020814</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In<sub>0.5</sub>Ga<sub>0.5</sub>As/GaAs quantum dots (QDs) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single-layer and 3-layer structures show only a weak TE polarization, it is enhanced for 10-layer stacks. The 20-layer stacks additionally show a low-energy side-band of high TE polarization, which is attributed to laterally coupled QDs forming after the growth of many layers by lateral coalescence of QDs in the upper layers. While in the single, 3- and 10-layer stacks, both TE polarized PL components are stronger than the TM component, the [110] TE component is weaker than the TM component in the 20-layer stack. 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